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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 20V 8.2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 4000 P-Channel - 20V 8.2A (Ta) 20 mOhm @ 7A, 4.5V 1.2V @ 250µA 45nC @ 5V 2520pF @ 10V 2.5V, 4.5V ±12V 1.8W (Ta)
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Infineon Technologies MOSFET P-CH 20V 8.2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1 P-Channel - 20V 8.2A (Ta) 20 mOhm @ 7A, 4.5V 1.2V @ 250µA 45nC @ 5V 2520pF @ 10V 2.5V, 4.5V ±12V 1.8W (Ta)
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Infineon Technologies MOSFET P-CH 20V 8.2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete Micro8™ 0 80 P-Channel - 20V 8.2A (Ta) 20 mOhm @ 7A, 4.5V 1.2V @ 250µA 45nC @ 5V 2520pF @ 10V 2.5V, 4.5V ±12V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 30V 8.2A 6TSOP SOT-23-6 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-TSOP 0 3000 N-Channel - 30V 8.2A (Ta) 19 mOhm @ 8.2A, 10V 2.35V @ 25µA 4.8nC @ 4.5V 560pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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