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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 195A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-262 0 1000 N-Channel - 40V 195A (Tc) 2 mOhm @ 100A, 10V 4V @ 150µA 225nC @ 10V 7330pF @ 25V 10V ±20V 230W (Tc)
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Infineon Technologies MOSFET N-CH 40V 195A TO220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1000 N-Channel - 40V 195A (Tc) 2 mOhm @ 100A, 10V 4V @ 150µA 225nC @ 10V 7330pF @ 25V 10V ±20V 230W (Tc)
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