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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 3.9A SOT223 TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) SOT-223 0 1680 N-Channel - 30V 3.9A (Ta) 45 mOhm @ 3.9A, 10V 2.4V @ 250µA 14nC @ 5V 530pF @ 25V 4V, 10V ±16V 1W (Ta)
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Infineon Technologies MOSFET N-CH 30V 3.9A SOT223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 0 2500 N-Channel - 30V 3.9A (Ta) 45 mOhm @ 3.9A, 10V 2.4V @ 250µA 14nC @ 5V 530pF @ 25V 4V, 10V ±16V 1W (Ta)
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Infineon Technologies MOSFET N-CH 30V 3.9A SOT223 TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 0 80 N-Channel - 30V 3.9A (Ta) 45 mOhm @ 3.9A, 10V 2.4V @ 250µA 14nC @ 5V 530pF @ 25V 4V, 10V ±16V 1W (Ta)
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Infineon Technologies MOSFET N-CH 30V 3.9A SOT223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 2500 N-Channel - 30V 3.9A (Ta) 45 mOhm @ 3.9A, 10V 2.4V @ 250µA 14nC @ 5V 530pF @ 25V 4V, 10V ±16V 1W (Ta)
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