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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 160A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D²PAK (TO-263AB) 0 800 N-Channel - 30V 160A (Tc) 1.95 mOhm @ 148A, 10V 2.35V @ 150µA 83nC @ 4.5V 8020pF @ 25V 10V ±20V 195W (Tc)
IRFS4229TRLPBF
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8,620
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Infineon Technologies MOSFET N-CH 250V 45A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 800 N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V 330W (Tc)
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2,400
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Infineon Technologies MOSFET N-CH 100V 88A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 800 N-Channel - 100V 88A (Tc) 10 mOhm @ 58A, 10V 4V @ 150µA 180nC @ 10V 5150pF @ 50V 10V ±20V 200W (Tc)
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Infineon Technologies MOSFET N-CH 40V 160A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 800 N-Channel - 40V 160A (Tc) 3.7 mOhm @ 75A, 10V 4V @ 250µA 150nC @ 10V 4340pF @ 25V 10V ±20V 200W (Tc)
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2,400
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Infineon Technologies MOSFET N-CH 100V 36A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 800 N-Channel - 100V 36A (Tc) 26.5 mOhm @ 22A, 10V 4V @ 250µA 63nC @ 10V 1770pF @ 25V 10V ±20V 92W (Tc)
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