Build a global manufacturer and supplier trusted trading platform.
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
10 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 100V DIRECTFET-MN DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MN 0 1000 N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 100V DIRECTFET-MN DirectFET™ Isometric MN HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MN 0 4800 N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 60V 86A DIRECTFET DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MN 0 1000 N-Channel - 60V 86A (Tc) 7 mOhm @ 17A, 10V 4.9V @ 150µA 50nC @ 10V 2120pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 80V 12A DIRECTFET DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MN 0 1000 N-Channel - 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MN 0 1000 N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 60V 86A DIRECTFET DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MN 0 1000 N-Channel - 60V 86A (Tc) 7 mOhm @ 17A, 10V 4.9V @ 150µA 50nC @ 10V 2120pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 80V 12A DIRECTFET DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Obsolete DIRECTFET™ MN 0 1000 N-Channel - 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 60V 86A DIRECTFET DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active DIRECTFET™ MN 0 4800 N-Channel - 60V 86A (Tc) 7 mOhm @ 17A, 10V 4.9V @ 150µA 50nC @ 10V 2120pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 80V 12A DIRECTFET DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active DIRECTFET™ MN 0 4800 N-Channel - 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Default Photo
GET PRICE
RFQ
4,800
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET DirectFET™ Isometric MN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active DIRECTFET™ MN 0 4800 N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V 2.8W (Ta), 89W (Tc)
Page 1 / 1