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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 60A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 20V 60A (Tc) 8.4 mOhm @ 15A, 10V 2.55V @ 250µA 14nC @ 4.5V 1190pF @ 10V 4.5V, 10V ±20V 48W (Tc)
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Infineon Technologies MOSFET N-CH 55V 30A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 75 N-Channel - 55V 30A (Tc) 24.5 mOhm @ 18A, 10V 4V @ 250µA 27nC @ 10V 740pF @ 25V 10V ±20V 48W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 55V 30A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 55V 30A (Tc) 24.5 mOhm @ 18A, 10V 4V @ 250µA 27nC @ 10V 740pF @ 25V 10V ±20V 48W (Tc)
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