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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 37A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 20V 37A (Tc) 15 mOhm @ 15A, 10V 2.55V @ 250µA 7.1nC @ 4.5V 560pF @ 10V 4.5V, 10V ±20V 35W (Tc)
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Infineon Technologies MOSFET N-CH 100V 8.7A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 75 N-Channel - 100V 8.7A (Tc) 190 mOhm @ 5.2A, 10V 4V @ 250µA 10nC @ 10V 310pF @ 25V 10V ±20V 35W (Tc)
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Infineon Technologies MOSFET N-CH 100V 8.7A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 100V 8.7A (Tc) 190 mOhm @ 5.2A, 10V 4V @ 250µA 10nC @ 10V 310pF @ 25V 10V ±20V 35W (Tc)
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RFQ
Infineon Technologies MOSFET N-CH 20V 37A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 20V 37A (Tc) 15 mOhm @ 15A, 10V 2.55V @ 250µA 7.1nC @ 4.5V 560pF @ 10V 4.5V, 10V ±20V 35W (Tc)
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