- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 55V 20A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 175°C (TJ) | Obsolete | I-PAK | 0 | 75 | P-Channel | - | 55V | 20A (Tc) | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | 660pF @ 50V | 4.5V, 10V | ±20V | 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 60V 5.1A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | - | Obsolete | IPAK (TO-251) | 0 | 75 | P-Channel | - | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | 2.5W (Ta), 25W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 13A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 66W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 60V 5.1A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | D-PAK | 0 | 75 | P-Channel | - | 60V | 5.1A (Tc) | 500 mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | 2.5W (Ta), 25W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.6A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 40W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 55V 31A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 75 | P-Channel | - | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | 110W (Tc) |
