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Supplier Device Package :
Minimum Quantity :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 60V 12A IPAK TO-251-3 Short Leads, IPak, TO-251AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active I-PAK 0 1 N-Channel - 60V 12A (Tc) 100 mOhm @ 6A, 10V 2V @ 250µA 10nC @ 5V 350pF @ 25V 5V, 10V ±16V 42.8W (Tc)
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STMicroelectronics MOSFET N-CH 60V 12A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 STripFET™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DPAK 0 2500 N-Channel - 60V 12A (Tc) 100 mOhm @ 6A, 10V 4V @ 250µA 12nC @ 10V 315pF @ 25V 10V ±20V 30W (Tc)
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