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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.950
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RFQ
STMicroelectronics MOSFET N-CH 60V 60A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -65°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 60V 60A (Tc) 14 mOhm @ 30A, 10V 1V @ 250µA 66nC @ 4.5V 2000pF @ 25V 10V, 5V ±15V 110W (Tc)
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Per Unit
$4.200
RFQ
135
In-stock
STMicroelectronics MOSFET N-CH 30V 80A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -60°C ~ 175°C (TJ) Obsolete I2PAK 0 1 N-Channel - 30V 80A (Tc) 4 mOhm @ 40A, 10V 1V @ 250µA 110nC @ 4.5V 5500pF @ 25V 4.5V, 10V ±20V 300W (Tc)
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Per Unit
$3.480
RFQ
132
In-stock
STMicroelectronics MOSFET N-CH 55V 80A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 55V 80A (Tc) 6.5 mOhm @ 40A, 10V 1V @ 250µA 136nC @ 5V 4850pF @ 25V 5V, 10V ±16V 300W (Tc)
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