Build a global manufacturer and supplier trusted trading platform.
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
STMicroelectronics MOSFET N-CH 60V 12A IPAK TO-251-3 Short Leads, IPak, TO-251AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active I-PAK 0 1 N-Channel - 60V 12A (Tc) 100 mOhm @ 6A, 10V 2V @ 250µA 10nC @ 5V 350pF @ 25V 5V, 10V ±16V 42.8W (Tc)
Default Photo
VIEW
RFQ
STMicroelectronics MOSFET N-CH 30V 17A IPAK TO-251-3 Short Leads, IPak, TO-251AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active I-PAK 0 1 N-Channel - 30V 17A (Tc) 50 mOhm @ 8.5A, 10V 2.2V @ 250µA 6.5nC @ 5V 320pF @ 25V 5V, 10V ±16V 30W (Tc)
Default Photo
GET PRICE
RFQ
681
In-stock
STMicroelectronics MOSFET P-CH 60V 10A IPAK TO-251-3 Short Leads, IPak, TO-251AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Obsolete I-PAK 0 1 P-Channel - 60V 10A (Tc) 200 mOhm @ 5A, 10V 4V @ 250µA 21nC @ 10V 850pF @ 25V 10V ±20V 40W (Tc)
Page 1 / 1