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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 60V 180A H2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DeepGATE™, STripFET™ VI Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active H2PAK-2 0 1000 N-Channel - 60V 180A (Tc) 2.4 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11800pF @ 25V 10V ±20V 300W (Tc)
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STMicroelectronics MOSFET N-CH 60V 180A H2PAK-6 TO-263-7, D²Pak (6 Leads + Tab) DeepGATE™, STripFET™ VI Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active H2PAK-6 0 1000 N-Channel - 60V 180A (Tc) 2.4 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11800pF @ 25V 10V ±20V 300W (Tc)
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STMicroelectronics MOSFET N-CH 60V 80A I2PAKFP TO-262-3 Full Pack, I²Pak DeepGATE™, STripFET™ VI Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 60V 80A (Tc) 3 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11400pF @ 25V 10V ±20V 41.7W (Tc)
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