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Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
813
In-stock
STMicroelectronics MOSFET N-CH 620V 8.4A TO220 TO-220-3 SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB 0 1 N-Channel - 620V 8.4A (Tc) 750 mOhm @ 4A, 10V 4.5V @ 100µA 42nC @ 10V 1250pF @ 50V 10V ±30V 125W (Tc)
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RFQ
1,500
In-stock
STMicroelectronics MOSFET N CH 620V 8.4A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 620V 8.4A (Tc) 750 mOhm @ 4A, 10V 4.5V @ 100µA 42nC @ 10V 1250pF @ 50V 10V ±30V 30W (Tc)
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