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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
463
In-stock
STMicroelectronics MOSFET N-CH 650V 69A TO247 TO-247-3 Automotive, AEC-Q101, MDmesh™ V Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247 0 1 N-Channel - 650V 69A (Tc) 32 mOhm @ 34.5A, 10V 5V @ 250µA 203nC @ 10V 9000pF @ 100V 10V ±25V 450W (Tc)
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RFQ
482
In-stock
STMicroelectronics MOSFET N-CH 650V TO-247 TO-247-3 Automotive, AEC-Q101, MDmesh™ V Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247 0 1 N-Channel - 650V 46A (Tc) 49 mOhm @ 23A, 10V 5V @ 250µA 142nC @ 10V 6420pF @ 100V 10V ±25V 330W (Tc)
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RFQ
1,000
In-stock
STMicroelectronics MOSFET N-CH 300V 53A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101, MDmesh™ V Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active D2PAK 0 1000 N-Channel - 300V 53A (Tc) 40 mOhm @ 26.5A, 10V 5V @ 250µA 95nC @ 10V 4240pF @ 100V 10V ±25V 250W (Tc)
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