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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
STMicroelectronics MOSFET N-CH 950V 2A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 SuperMESH5™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel - 950V 2A (Tc) 5 Ohm @ 1A, 10V 5V @ 100µA 10nC @ 10V 105pF @ 100V 10V 30V 45W (Tc)
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RFQ
443
In-stock
STMicroelectronics MOSFET N-CH 950V 2A TO220 TO-220-3 SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220 0 1 N-Channel - 950V 2A (Tc) 5 Ohm @ 1A, 10V 5V @ 100µA 10nC @ 10V 105pF @ 100V 10V 30V 45W (Tc)
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RFQ
2,159
In-stock
STMicroelectronics MOSFET N-CH 950V 2A TO220FP TO-220-3 Full Pack SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220FP 0 1 N-Channel - 950V 2A (Tc) 5 Ohm @ 1A, 10V 5V @ 100µA 10nC @ 10V 105pF @ 100V 10V 30V 20W (Tc)
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RFQ
5,000
In-stock
STMicroelectronics MOSFET N-CH 800V 2A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 SuperMESH5™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel - 800V 2A (Tc) 4.5 Ohm @ 1A, 10V 5V @ 100µA 3nC @ 10V 95pF @ 100V 10V 30V 45W (Tc)
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