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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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1,490
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STMicroelectronics MOSFET N-CH 800V 6A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 800V 6A (Tc) 950 mOhm @ 3A, 10V 5V @ 100µA 16.5nC @ 10V 450pF @ 100V 10V ±30V 25W (Tc)
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1,313
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STMicroelectronics MOSFET N-CH 800V 6A I2PAK-FP TO-262-3 Full Pack, I²Pak SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 800V 6A (Tc) 1.2 Ohm @ 3A, 10V 5V @ 100µA 13.4nC @ 10V 360pF @ 100V 10V ±30V 25W (Tc)
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RFQ
1,488
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STMicroelectronics MOSFET N-CH 800V 4.5A I2PAK-FP TO-262-3 Full Pack, I²Pak SuperMESH5™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 800V 4.5A (Tc) 1.6 Ohm @ 2A, 10V 5V @ 100µA 13nC @ 10V 270pF @ 100V 10V 30V 25W (Tc)
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