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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 600V 13A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MDmesh™ M2-EP Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active D2PAK 0 1000 N-Channel - 600V 13A (Tc) - 4.75V @ 250µA 22nC @ 10V - 10V - -
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STMicroelectronics MOSFET N-CH 600V 34A EP D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MDmesh™ M2-EP Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active D2PAK 0 1000 N-Channel - 600V 34A (Tc) 87 mOhm @ 17A, 10V 4.75V @ 250µA 55nC @ 10V 2370pF @ 100V 10V ±25V 250W (Tc)
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