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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.830
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RFQ
Infineon Technologies MOSFET N-CH 40V 95A TO-220-3 Full Pack HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB Full-Pak 0 4000 N-Channel - 40V 95A (Tc) 2.5 mOhm @ 57A, 10V 3.9V @ 100µA 132nC @ 10V 4549pF @ 25V 10V ±20V 42W (Tc)
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Per Unit
$1.240
RFQ
2,579
In-stock
Infineon Technologies MOSFET N-CH 40V 95A TO-220AB TO-220-3 HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 40V 95A (Tc) 4.5 mOhm @ 57A, 10V 3.9V @ 50µA 68nC @ 10V 2110pF @ 25V 6V, 10V ±20V 83W (Tc)
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Per Unit
$1.010
RFQ
3,842
In-stock
Infineon Technologies MOSFET N CH 60V 95A TO-220AB TO-220-3 HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220 0 1 N-Channel - 60V 95A (Tc) 5.9 mOhm @ 57A, 10V 3.7V @ 100µA 110nC @ 10V 4010pF @ 25V 6V, 10V ±20V 125W (Tc)
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