- Package / Case :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 75V 195A TO247 | TO-247-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 400 | N-Channel | - | 75V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.7V @ 250µA | 830nC @ 10V | 29550pF @ 25V | 6V, 10V | ±20V | 517W (Tc) | |||
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Infineon Technologies | MOSFET N CH 40V 195A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 6V, 10V | ±20V | 230W (Tc) |
