- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
25,000
In-stock
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Toshiba | MOSFET N-CH 525V 12A TO-220SIS | TO-220-3 Full Pack | π-MOSVII | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220SIS | 0 | 50 | N-Channel | - | 525V | 12A (Ta) | 580 mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | 45W (Tc) | ||
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GET PRICE |
460,000
In-stock
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Toshiba | MOSFET N-CH 600V 12A TO-220SIS | TO-220-3 Full Pack | π-MOSVII | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220SIS | 0 | 2500 | N-Channel | - | 600V | 12A (Ta) | 550 mOhm @ 6A, 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | 10V | ±30V | 45W (Tc) | ||
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GET PRICE |
46,000
In-stock
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Toshiba | MOSFET N-CH 600V 10A TO220SIS | TO-220-3 Full Pack | π-MOSVII | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220SIS | 0 | 2500 | N-Channel | - | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | 45W (Tc) |
