- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
30,100
In-stock
|
Toshiba | MOSFET N-CH 600V 20A TO-220SIS | TO-220-3 Full Pack | DTMOSII | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220SIS | 0 | 1 | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | 45W (Tc) | ||
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|
GET PRICE |
14,360
In-stock
|
Toshiba | MOSFET N-CH 600V 12A TO-3PN | TO-3P-3, SC-65-3 | DTMOSII | Bulk | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-3P(N) | 0 | 1 | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | 144W (Tc) |
