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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Number of Channels Configuration Technology Transistor Polarity Channel Mode Rise Time Fall Time Transistor Type Package Typical Turn-Off Delay Time Typical Turn-On Delay Time Product Category Installation style trademark Id-continuous drain current Pd-power dissipation Trade name Minimum working temperature Package / Box Maximum working temperature Factory packing quantity Vds-Drain-source breakdown voltage Rds On-Drain-source on resistance Vgs-gate-source voltage Vgs th- gate-source threshold voltage Qg-gate charge Forward transconductance-minimum
SUM90P10-19L-E3
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25,000
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Siliconix / Vishay MOSFET 100V 90A 375W 19mohm @ 10V SUM 1 Channel Single Si P-Channel Enhancement 510 ns 870 ns 1 P-Channel Cut Tape 145 ns 20 ns MOSFET SMD/SMT Vishay Semiconductors 90 A 375 W TrenchFET -55 C TO-263-3 + 175 C 800 100 V 19 mOhms -20 V, + 20 V 1 V 217 nC 80 S
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