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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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RFQ
Diodes Incorporated MOSFET 2N-CH 60V 4.3A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOP 0 2500 2 N-Channel (Dual) 1.25W Logic Level Gate 60V 4.3A 40 mOhm @ 8.2A, 10V 3V @ 250µA 24.2nC @ 5V 1407pF @ 40V
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RFQ
Diodes Incorporated MOSFET 2N-CH 100V 1.6A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOP 0 2500 2 N-Channel (Dual) 1.25W Logic Level Gate 100V 1.6A 250 mOhm @ 3.2A, 10V 2V @ 250µA (Min) 7.7nC @ 10V 405pF @ 50V
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Per Unit
$1.275
VIEW
RFQ
Diodes Incorporated MOSFET 2N-CH 60V 4.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 500 2 N-Channel (Dual) 1.25W Logic Level Gate 60V 4.3A 40 mOhm @ 8.2A, 10V 3V @ 250µA 24.2nC @ 5V 1407pF @ 40V
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Per Unit
$0.525
RFQ
3,000
In-stock
Diodes Incorporated MOSFET 2N-CH 100V 1.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SOP 0 500 2 N-Channel (Dual) 1.25W Logic Level Gate 100V 1.6A 250 mOhm @ 3.2A, 10V 2V @ 250µA (Min) 7.7nC @ 10V 405pF @ 50V
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