- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Packaging :
- Rds On - Drain-Source Resistance :
- Tradename :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | RoHS | |
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GET PRICE |
86,500
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A USON-6 | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 78 W | Si | N-Channel | 30 V | 50 A | 1 MOhms | 1.2 V | 81 nC | USON-6 | Green available | ||||||||
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4,441
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.4 mOhms | 1 V | 11 nC | Enhancement | OptiMOS | ||||||
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2,323
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench Fast Switching | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 8.8 mOhms | Enhancement | PowerTrench | ||||||||
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4,264
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||||
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2,811
In-stock
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onsemi | MOSFET SWITCHING DEVICE | SMD/SMT | ATPAK-3 | Reel | Si | N-Channel | 30 V | 50 A | 12 mOhms | ||||||||||||||
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668
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 7.7 mOhms | 1 V | 28 nC | Enhancement | PowerTrench | ||||||
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1,551
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.6 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||||
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1,873
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 8 mOhms | Enhancement | OptiMOS | ||||||||
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GET PRICE |
32,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.5 mOhms | Enhancement | OptiMOS | |||||||
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1,326
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6 mOhms | OptiMOS | |||||||||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6.3 mOhms | 18 nC | OptiMOS | ||||||||
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2,134
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6.4 mOhms | Enhancement | OptiMOS | ||||||||
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2,050
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||||
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GET PRICE |
17,750
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS-T2 | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.5 mOhms | OptiMOS | ||||||||||||
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892
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.4 mOhms | 1 V | 11 nC | Enhancement | OptiMOS | ||||||
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2,000
In-stock
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Toshiba | MOSFET N-ch 30V 50A DP | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 9.8 mOhms | |||||||||||||
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GET PRICE |
12,620
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.6 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | ||||||
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2,362
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 7.3 mOhms | Enhancement | OptiMOS | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6 mOhms | Enhancement | OptiMOS | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.5 mOhms | OptiMOS | ||||||||||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 30V 50A | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 2.8 mOhms | Enhancement | |||||||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 7.3 mOhms | Enhancement | OptiMOS | ||||||||
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752
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | Enhancement | OptiMOS |
