- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
37 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,919
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CH Logic Level PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 1.5 mOhms | Enhancement | PowerTrench | ||||||
|
1,540
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | ||||||
|
8,442
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | ||||
|
2,296
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.8 mOhms | Enhancement | |||||||
|
6,413
In-stock
|
IR / Infineon | MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.1 mOhms | 1.35 V to 2.35 V | 30 nC | Enhancement | |||||
|
748
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.5 mOhms | Enhancement | PowerTrench | ||||||
|
775
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.1 mOhms | PowerTrench | ||||||||
|
116,100
In-stock
|
STMicroelectronics | MOSFET N-channel 30V, 80A STripFET Mosfet | 22 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 5.4 mOhms | Enhancement | |||||||
|
719
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 4 mOhms | Enhancement | |||||||
|
4,389
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | ||||
|
30,050
In-stock
|
STMicroelectronics | MOSFET N-channel 30 V | 22 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 5 mOhms | Enhancement | |||||||
|
2,184
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.4 mOhms | Enhancement | OptiMOS | ||||||
|
1,442
In-stock
|
STMicroelectronics | MOSFET N Ch 30V 0.0045 Ohm 80A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 5.5 mOhms | Enhancement | |||||||
|
1,804
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.4 mOhms | Enhancement | OptiMOS | ||||||
|
700
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.3 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | ||||
|
1,192
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2 mOhms | 1 V | 140 nC | Enhancement | OptiMOS | ||||
|
513
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.4 mOhms | Enhancement | OptiMOS | ||||||
|
496
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | 1.2 V | 105 nC | Enhancement | |||||
|
498
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 5.2 mOhms | Enhancement | |||||||
|
1,333
In-stock
|
onsemi | MOSFET Pwr MOSFET 30V 80A 3.2mOhm SGL N-CH | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.2 mOhms | ||||||||||||
|
50
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | ||||||
|
248
In-stock
|
STMicroelectronics | MOSFET N-Ch 30V 0.0037 Ohm 80A STripFET VI | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.7 mOhms | 2.5 V | 20 nC | ||||||||
|
800
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 1.5 mOhms | 2.9 V | 187 nC | PowerTrench | |||||||
|
2,500
In-stock
|
STMicroelectronics | MOSFET N-channel 30 V, 2.8 mOhm typ., 80 A STripFET H7 Power M... | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.8 mOhms | 1.2 V | 13.7 nC | Enhancement | STripFET | |||||
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.6 mOhms | 1.2 V | 105 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.3 mOhms | 1 V | 140 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2 mOhms | 1 V | 140 nC | Enhancement | |||||
|
4,990
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | |||||
|
VIEW | Fairchild Semiconductor | MOSFET 30V N-Channel PwrTrch MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 1.9 mOhms | Enhancement | PowerTrench | ||||||
|
VIEW | STMicroelectronics | MOSFET N-channel 30V 0.0024 Ohm, 80 A, D2PAK | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3 mOhms | 80 nC | Enhancement |