- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,777
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 13A 10mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 10.5 mOhms | 1.8 V | 9.5 nC | |||||
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1,797
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | |||||
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2,584
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 89 A | 10.5 mOhms | 27 nC | Enhancement | |||||
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40,000
In-stock
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IR / Infineon | MOSFET MOSFT 30V 13A 8mOhm 34nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.5 mOhms | 2 V | 34 nC | |||||
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3,856
In-stock
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onsemi | MOSFET Single N-Channel 30V,10A,10.5mOhm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 10.5 mOhms | |||||||||
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1,659
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 3 V | 27 nC | Enhancement | ||||
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GET PRICE |
5,000
In-stock
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onsemi | MOSFET Single N-Channel 30V,10A,10.5mOhm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 10.5 mOhms | ||||||||
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3,363
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 91 A | 10.5 mOhms | 3 V | 27 nC | Enhancement | ||||
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3,200
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | |||||
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13
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 30 V | 35 A | 10.5 mOhms | Enhancement | OptiMOS |