- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | |
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VIEW | Toshiba | MOSFET N-Ch 30V FET 5.9A 2.2W 232pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 74 mOhms | |||
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899
In-stock
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Toshiba | MOSFET N-Ch 30V FET 6A 2.2W 640pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 32 mOhms |
