- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
6,534
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 200V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 200 V | 120 mA | 15 Ohms | Enhancement | ||||||
|
|
1,623
In-stock
|
Fairchild Semiconductor | MOSFET 100V 80A 15 OHM NCH POWER TREN | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 Ohms | Enhancement | PowerTrench | |||||
|
|
1,687
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 190mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 190 mA | 15 Ohms | 2 V | - | Enhancement | ||||
|
|
1,050
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 190mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 190 mA | 15 Ohms | 2 V | - | Enhancement | ||||
|
|
2,778
In-stock
|
onsemi | MOSFET NFET SOT223 600V 6A 15OHM | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 0.25 A | 15 Ohms | 4 V | 4.9 nC | Enhancement | ||||
|
|
|
4,000
In-stock
|
onsemi | MOSFET NFET SOT223 600V 6A 15OHM | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 0.25 A | 15 Ohms | 4 V | 4.9 nC | Enhancement | ||||
|
|
VIEW | IXYS | MOSFET 1 Amps 1000V 14 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1 A | 15 Ohms | Enhancement |
