- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,621
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH | 30 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 300 mA | 15 Ohms | 4.9 nC | Enhancement | ||||
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3,559
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH | 30 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 250 mA | 15 Ohms | Enhancement | |||||
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1,687
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 190mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 190 mA | 15 Ohms | 2 V | - | Enhancement | |||
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1,050
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 190mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 190 mA | 15 Ohms | 2 V | - | Enhancement | |||
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2,778
In-stock
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onsemi | MOSFET NFET SOT223 600V 6A 15OHM | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 0.25 A | 15 Ohms | 4 V | 4.9 nC | Enhancement | |||
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4,000
In-stock
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onsemi | MOSFET NFET SOT223 600V 6A 15OHM | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 0.25 A | 15 Ohms | 4 V | 4.9 nC | Enhancement | |||
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VIEW | IXYS | MOSFET 1 Amps 1000V 14 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1 A | 15 Ohms | Enhancement |
