- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,537
In-stock
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Fairchild Semiconductor | MOSFET DISC BY MFG 2/02 | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.6 A | 125 mOhms | Enhancement | ||||||
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2,357
In-stock
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Fairchild Semiconductor | MOSFET 200V NChannel UniFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 16 A | 125 mOhms | UniFET | |||||||
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1,097
In-stock
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Fairchild Semiconductor | MOSFET 600V 29A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 125 mOhms | 2.5 V | 75 nC | Enhancement | SuperFET II | |||
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5,121
In-stock
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STMicroelectronics | MOSFET Low charge STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 125 mOhms | Enhancement | ||||||
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653
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 30A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 125 mOhms | 96 nC | CoolMOS | |||||
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2,641
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 5.5 V | 28 nC | Enhancement | ||||
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880
In-stock
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STMicroelectronics | MOSFET N-channel 650 V MDMesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 64 nC | ||||||
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GET PRICE |
41,177
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 26 A | 125 mOhms | 3 V | 45.5 nC | Enhancement | |||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 4 V | 64 nC | ||||||
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240
In-stock
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Fairchild Semiconductor | MOSFET 600V 29A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 125 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | |||
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1,079
In-stock
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STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 125 mOhms | Enhancement | ||||||
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919
In-stock
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STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 125 mOhms | 4 V | 28 nC | Enhancement | ||||
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1,715
In-stock
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Diodes Incorporated | MOSFET 100V N-Channel 2.9A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4 A | 125 mOhms | Enhancement | ||||||
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7,390
In-stock
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onsemi | MOSFET SWITCHING DEVICE | SOT-563-6 | Reel | Si | N-Channel | 20 V | 2 A | 125 mOhms | ||||||||||||
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1,524
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 125 mOhms | Enhancement | PowerTrench | |||||
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6,561
In-stock
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onsemi | MOSFET NCH 1.8V DRIVE SERIES | SMD/SMT | SOT-323-3 | Reel | Si | N-Channel | 20 V | 2 A | 125 mOhms | |||||||||||
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866
In-stock
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Diodes Incorporated | MOSFET N-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.4 A | 125 mOhms | 4 V | 9.6 nC | Enhancement | ||||
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24
In-stock
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IXYS | MOSFET 25 Amps 800V | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 125 mOhms | 4 V | 180 nC | Enhancement | CoolMOS | |||
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5,400
In-stock
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onsemi | MOSFET NCH 1.8V DRIVE SERIE | 12 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 125 mOhms | 1.7 nC | Enhancement | ||||||
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40
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 125 mOhms | HyperFET | |||||||||
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50
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 125 mOhms | HyperFET | |||||||||
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142
In-stock
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IR / Infineon | MOSFET MOSFT 150V 18A 125mOhm 28nC | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | ||||||||
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66
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 34 A | 125 mOhms | 3 V | 180 nC | Enhancement | |||||
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15,000
In-stock
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onsemi | MOSFET 30V 2.1A N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.1 A | 125 mOhms | Enhancement | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 30A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30 A | 125 mOhms | 96 nC | CoolMOS | |||||
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VIEW | IXYS | MOSFET 19 Amps 600V 0.125 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 19 A | 125 mOhms | Enhancement | CoolMOS | |||||
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VIEW | Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement | |||||
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VIEW | onsemi | MOSFET NFET DIE CLAMPEDFET 55V | 15 V | SMD/SMT | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 59 V | 2 A | 125 mOhms | Enhancement |
