- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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42,800
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 5.6 mOhms | 170 nC | |||||
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19,100
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 140A 7mOhm 150nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||
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1,104
In-stock
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Infineon Technologies | MOSFET MOSFT 140A 50.7nC 5.5mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 7.5 mOhms | 50.7 nC | |||||
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178
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 140 A | 8 mOhms | 100 nC | Enhancement | |||
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149
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||
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48
In-stock
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IXYS | MOSFET 140 Amps 0V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 140 A | 5.4 mOhms |
