- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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9,653
In-stock
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Fairchild Semiconductor | MOSFET 30V PCH DUAL POWER TRENCH M | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 6.9 A | 18 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
23,550
In-stock
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STMicroelectronics | MOSFET P-Ch 55 Volt 80 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 80 A | 18 mOhms | Enhancement | |||||
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GET PRICE |
4,935
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -20V 9A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 9 A | 18 mOhms | - 1 V | 42 nC | ||||
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GET PRICE |
4,739
In-stock
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Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | |||
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GET PRICE |
1,944
In-stock
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IR / Infineon | MOSFET DUAL -20V P-CH 12 VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 9 A | 18 mOhms | 42 nC | Enhancement | ||||
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3,417
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40V 25mOhm -8.6A | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.6 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | |||
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GET PRICE |
3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | |||
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GET PRICE |
3,403
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.2 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | |||
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GET PRICE |
2,634
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 18 mOhms | - 2.1 V | Enhancement | ||||
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GET PRICE |
580
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 140mOhm 12A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.2 A | 18 mOhms | - 800 mV | 33.7 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch -40V FET 1650pF -9A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 9 A | 18 mOhms |
