Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BSS215P H6327
GET PRICE
RFQ
3,035
In-stock
Infineon Technologies MOSFET P-Ch -20V -1.5A SOT-23-3 +/- 12 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 1.5 A 105 mOhms - 1.2 V - 3.6 nC Enhancement
BSR92PH6327XTSA1
GET PRICE
RFQ
1,852
In-stock
Infineon Technologies MOSFET SMALL SIGNAL+P-CH 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 250 V - 140 mA 11 Ohms - 1.5 V - 3.6 nC Enhancement
BSS215PH6327XTSA1
GET PRICE
RFQ
3,885
In-stock
Infineon Technologies MOSFET P-Ch -20V -1.5A SOT-23-3 +/- 12 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 1.5 A 105 mOhms - 1.2 V - 3.6 nC Enhancement
BSS215PH6327XT
GET PRICE
RFQ
4,140
In-stock
Infineon Technologies MOSFET P-Ch -20V -1.5A SOT-23-3 +/- 12 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 1.5 A 105 mOhms - 1.2 V - 3.6 nC Enhancement
Page 1 / 1