- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
480
In-stock
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IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | |||||
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GET PRICE |
62
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | ||
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GET PRICE |
85
In-stock
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IXYS | MOSFET -36.0 Amps -150V 0.110 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 110 mOhms | Enhancement | |||||
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GET PRICE |
30
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET -44 Amps -150V 0.065 Rds | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 44 A | 65 mOhms |
