- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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69
In-stock
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Diodes Incorporated | MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon | 8 V, 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 1.15 A | 5 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement | |||
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965
In-stock
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Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 12Vgss 0.45W | 4.5 V, - 4.5 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.03 A, - 700 mA | 500 mOhms, 1 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 12Vgss 0.45W | 4.5 V, - 4.5 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.03 A, - 700 mA | 500 mOhms, 1 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement |
