- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,945
In-stock
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Diodes Incorporated | MOSFET 100V 1.4A N-Channel MOSFET H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V | 1.1 A | 700 mOhms, 1 Ohms | 2 V | 2.9 nC, 3.5 nC | Enhancement | |||
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91
In-stock
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Diodes Incorporated | MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 1 A, - 850 mA | 700 mOhms, 1.45 Ohms | 2 V | 2.9 nC, 3.5 nC | Enhancement |
