- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,074
In-stock
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Diodes Incorporated | MOSFET 60V UMOS H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V | 1.8 A | 300 mOhms, 425 mOhms | 1 V | 3.2 nC, 5.1 nC | Enhancement | ||||
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5,108
In-stock
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Diodes Incorporated | MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 1.8 A, - 1.42 A | 250 mOhms, 600 mOhms | 1 V, - 3 V | 3.2 nC, 5.1 nC | Enhancement |