- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,044
In-stock
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Diodes Incorporated | MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 8.5 A, 6.8 A | 28 mOhms, 45 mOhms | 1.1 V | 11.6 nC | Enhancement | |||
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7,330
In-stock
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onsemi | MOSFET PCH+NCH 2.5V DRIVE SERIES | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 350 mA | 3.7 Ohms | 1.58 nC | |||||
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2,700
In-stock
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onsemi | MOSFET NCH+PCH 1.8V DRIVE SERIES | 10 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 400 mA | 280 mOhms | 1.58 nC | |||||
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3,000
In-stock
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onsemi | MOSFET NPN+NPN | 10 V | SMD/SMT | EMH-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 4 A, - 3 A | 45 mohms, 85 mOhms |
