- Manufacture :
- Series :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 38A IPAK | TO-252-4, DPak (3 Leads + Tab) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | I-PAK (LF701) | 0 | 450 | N-Channel | - | 80V | 38A (Tc) | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 550 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 550 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 550 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 50 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 68W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 38A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220AB | 0 | 50 | N-Channel | - | 30V | 38A (Tc) | 26 mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | 4.5V, 10V | ±16V | 68W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 24V 38A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | STripFET™ III | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | DPAK | 0 | 2500 | N-Channel | - | 24V | 38A (Tc) | 13.5 mOhm @ 19A, 10V | 2.5V @ 250µA | 24nC @ 10V | 1070pF @ 25V | 5V, 10V | ±20V | 40W (Tc) |
