Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
STW45NM60
Per Unit
$13.710
RFQ
6,200
In-stock
STMicroelectronics MOSFET N-CH 650V 45A TO-247 TO-247-3 MDmesh™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247-3 0 1 N-Channel - 650V 45A (Tc) 110 mOhm @ 22.5A, 10V 5V @ 250µA 134nC @ 10V 3800pF @ 25V 10V ±30V 417W (Tc)
IRFS4229TRLPBF
GET PRICE
RFQ
8,620
In-stock
Infineon Technologies MOSFET N-CH 250V 45A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 800 N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V 330W (Tc)
Page 1 / 1