Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$12.380
RFQ
501
In-stock
STMicroelectronics MOSFET N-CH 1.2KV TO247-3 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 200°C (TJ) Active HiP247™ 0 1 N-Channel - 1200V 12A (Tc) 690 mOhm @ 6A, 20V 3.5V @ 250µA 22nC @ 20V 290pF @ 400V 20V +25V, -10V 150W (Tc)
Default Photo
Per Unit
$12.580
RFQ
1,092
In-stock
onsemi MOSFET N CH 600V 77A TO-247 TO-247-3 SuperFET® II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 77A (Tc) 41 mOhm @ 39A, 10V 3.5V @ 250µA 380nC @ 10V 13700pF @ 100V 10V ±20V 592W (Tc)
Default Photo
Per Unit
$0.766
RFQ
7,500
In-stock
Diodes Incorporated MOSFET N-CH 100V 9.4A 8-PowerTDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active POWERDI5060-8 0 2500 N-Channel - 100V 9.4A (Ta), 98A (Tc) 9.5 mOhm @ 13A, 10V 3.5V @ 250µA 71nC @ 10V 3000pF @ 50V 4.5V, 10V ±20V 1.2W (Ta), 139W (Tc)
18537N
5+
$1.000
50+
$0.800
RFQ
30,000
In-stock
Texas instruments MOSFET N-CH 60V 50A 8SON 8-PowerTDFN NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-VSONP (5x6) 0 2500 N-Channel - 60V 11A (Ta), 50A (Tc) 13 mOhm @ 12A, 10V 3.5V @ 250µA 18nC @ 10V 1480pF @ 30V 6V, 10V ±20V 3.2W (Ta), 75W (Tc)
Page 1 / 1