- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Power Dissipation (Max) :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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4,000
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 21A PQFN | 8-PowerVDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PQFN (5x6) | 0 | 4000 | P-Channel | - | 30V | 21A (Ta), 40A (Tc) | 4.6 mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | 5250pF @ 15V | 4.5V, 10V | ±20V | 3.1W (Ta) | ||||
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16,000
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | - | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) |