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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.138
VIEW
RFQ
Infineon Technologies MOSFET P-CH 30V 3A SOT-23 TO-236-3, SC-59, SOT-23-3 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Micro3™/SOT-23 0 3000 P-Channel - 30V 3A (Ta) 98 mOhm @ 3A, 10V 2.5V @ 250µA 14nC @ 10V 510pF @ 25V 4.5V, 10V ±20V 1.25W (Ta)
P4NK60Z
10+
$0.600
100+
$0.450
RFQ
2,355
In-stock
STMicroelectronics MOSFET N-CH 600V 4A TO-220 TO-220-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-220AB 0 1 N-Channel - 600V 4A (Tc) 2 Ohm @ 2A, 10V 4.5V @ 50µA 26nC @ 10V 510pF @ 25V 10V ±30V 70W (Tc)
IRLL024NTRPBF
Per Unit
$0.388
RFQ
130,000
In-stock
Infineon Technologies MOSFET N-CH 55V 3.1A SOT223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 2500 N-Channel - 55V 3.1A (Ta) 65 mOhm @ 3.1A, 10V 2V @ 250µA 15.6nC @ 5V 510pF @ 25V 4V, 10V ±16V 1W (Ta)
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Per Unit
$0.316
RFQ
10,000
In-stock
onsemi MOSFET N-CH 200V 7.8A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 QFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D-PAK 0 2500 N-Channel - 200V 7.8A (Tc) 360 mOhm @ 3.9A, 10V 4V @ 250µA 26nC @ 10V 510pF @ 25V 10V ±30V 50W (Tc)
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