- Manufacture :
- Mounting Type :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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104
In-stock
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STMicroelectronics | MOSFET N-CH 650V 88A ISOTOP | ISOTOP | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Chassis Mount | 150°C (TJ) | Active | ISOTOP | 0 | 1 | N-Channel | - | 650V | 88A (Tc) | 29 mOhm @ 42A, 10V | 5V @ 250µA | 204nC @ 10V | 8825pF @ 100V | 10V | ±25V | 494W (Tc) | |||
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1,464
In-stock
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Infineon Technologies | MOSFET N-CH 100V 96A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 200W (Tc) | |||
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1,345
In-stock
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Infineon Technologies | MOSFET N-CH 200V 88A TO220-3 | TO-220-3 | OptimWatt™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 200V | 88A (Tc) | 10.7 mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | 10V | ±20V | 300W (Tc) | |||
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644
In-stock
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Infineon Technologies | MOSFET N-CH 200V 88A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 200V | 88A (Tc) | 11 mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | 10V | ±20V | 300W (Tc) |
