Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$11.760
RFQ
588
In-stock
STMicroelectronics MOSFET N-CH 600V 50A TO-247-3 Automotive, AEC-Q101, MDmesh™ DM2 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 0 1 N-Channel - 600V 50A (Tc) 60 mOhm @ 25A, 10V 5V @ 250µA 90nC @ 10V 4100pF @ 100V 10V ±25V 360W (Tc)
Default Photo
Per Unit
$3.100
RFQ
1,280
In-stock
Infineon Technologies MOSFET N-CH 250V 25A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-3-1 0 1 N-Channel - 250V 25A (Tc) 60 mOhm @ 25A, 10V 4V @ 90µA 29nC @ 10V 2350pF @ 100V 10V ±20V 136W (Tc)
Page 1 / 1