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- Current - Continuous Drain (Id) @ 25°C :
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- Vgs(th) (Max) @ Id :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.7A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | N-Channel | - | 30V | 8.7A (Ta), 19A (Tc) | 15.5 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | 2.5V, 4.5V | ±12V | 2.1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 8.8A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TSDSON-6 | 0 | 1 | N-Channel | - | 30V | 8.8A (Ta), 19A (Tc) | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | 4.5V, 10V | ±20V | 2.1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 9.9A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-PQFN (2x2) | 0 | 1 | N-Channel | - | 25V | 9.9A (Ta), 21A (Tc) | 13 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | 4.5V, 10V | ±20V | 2.1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 30V 13A 8TDSON | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 30V | 13A (Ta) | 7 mOhm @ 5A, 10V | 2V @ 250µA | 7nC @ 4.5V | 890pF @ 15V | 4.5V, 10V | ±20V | 2.1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 9.9A PQFN | 6-PowerVDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | N-Channel | - | 25V | 9.9A (Ta), 21A (Tc) | 13 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4nC @ 10V | 653pF @ 10V | 4.5V, 10V | ±20V | 2.1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 30V 17A 8TDSON | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 30V | 17A (Ta) | 4.4 mOhm @ 8A, 10V | 2V @ 250µA | 15nC @ 10V | 950pF @ 15V | 4.5V, 10V | ±20V | 2.1W (Ta) | |||
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8,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.7A PQFN | 6-PowerVDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | N-Channel | - | 30V | 8.7A (Ta), 19A (Tc) | 15.5 mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | 1019pF @ 25V | 2.5V, 4.5V | ±12V | 2.1W (Ta) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.8A PQFN | 6-PowerVDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-6 | 0 | 4000 | N-Channel | - | 30V | 8.8A (Ta), 19A (Tc) | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | 4.5V, 10V | ±20V | 2.1W (Ta) |
