- Manufacture :
- Packaging :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 200V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V | 3W (Ta), 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 6000 | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V | 3W (Ta), 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 25A TO-220 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO220-3-1 | 0 | 500 | N-Channel | - | 55V | 25A (Tc) | 25.1 mOhm @ 15A, 10V | 4V @ 20µA | 41nC @ 10V | 1862pF @ 25V | 10V | ±20V | 48W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 25A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 55V | 25A (Tc) | 24.8 mOhm @ 15A, 10V | 4V @ 20µA | 41nC @ 10V | 1862pF @ 25V | 10V | ±20V | 48W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 17A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 6525 | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V | 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 70A TO220-3 | TO-220-3 | OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO-220-3 | 0 | 500 | N-Channel | - | 40V | 70A (Tc) | 4.8 mOhm @ 70A, 10V | 4V @ 200µA | 41nC @ 10V | 3300pF @ 25V | 10V | ±20V | 79W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CHANNEL 40V 80A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, STripFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 40V | 80A (Tc) | 3.5 mOhm @ 40A, 10V | 4V @ 250µA | 41nC @ 10V | 2790pF @ 25V | 10V | ±20V | 134W (Tc) | |||
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25,000
In-stock
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onsemi | MOSFET N-CH 60V 50A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220-3 | 0 | 1 | N-Channel | - | 60V | 50A (Tc) | 22 mOhm @ 25A, 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | 10V | ±25V | 120W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 100V 26A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 26A (Tc) | 60 mOhm @ 12A, 10V | 4V @ 250µA | 41nC @ 10V | 870pF @ 25V | 10V | ±20V | 85W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 2000 | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V | 3W (Ta), 140W (Tc) | |||
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1,000
In-stock
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Infineon Technologies | MOSFET N-CH 200V 17A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V | 3W (Ta), 140W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 8TDSON | 8-PowerVDFN | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TSDSON-8 | 0 | 5000 | N-Channel | - | 40V | 40A (Tc) | 3.1 mOhm @ 20A, 10V | 3.4V @ 30µA | 41nC @ 10V | 2310pF @ 25V | 7V, 10V | ±20V | 71W (Tc) |
