- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 150V 5.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N-Channel | - | 150V | 5.1A (Ta) | 44 mOhm @ 3.1A, 10V | 4V @ 250µA | 53nC @ 10V | 1783pF @ 25V | 10V | ±20V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N-Channel | - | 30V | 18A (Ta) | 6.5 mOhm @ 15A, 4.5V | 1V @ 250µA | 60nC @ 5V | 5500pF @ 16V | 4.5V | ±12V | 3.1W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 1.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 570 | N-Channel | - | 150V | 1.9A (Ta) | 280 mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15nC @ 10V | 330pF @ 25V | 10V | ±30V | 2.5W (Ta) |
