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Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
17 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 17.2A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   - 30V 17.2A (Ta) 5.6 mOhm @ 17.2A, 10V 2.2V @ 250µA 36nC @ 4.5V 2910pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   - 30V 14A (Ta) 8.5 mOhm @ 14A, 10V 2.35V @ 25µA 12nC @ 4.5V 1040pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 14A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   - 30V 14A (Ta) 8.7 mOhm @ 14A, 10V 2.35V @ 25µA 12nC @ 4.5V 1020pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 11A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   - 30V 11A (Ta) 11.9 mOhm @ 11A, 10V 2.35V @ 25µA 9.3nC @ 4.5V 760pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 14nC @ 4.5V - 4.5V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 3V @ 250µA 14nC @ 4.5V - 4.5V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 17nC @ 5V - 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 17nC @ 5V - 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 13A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   - 30V 13A (Ta) 11 mOhm @ 7A, 4.5V 3V @ 250µA 31nC @ 5V - 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 5.8A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   Schottky Diode (Isolated) 30V 5.8A (Ta) 35 mOhm @ 4.1A, 10V 1V @ 250µA 27nC @ 10V 510pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 30V 6.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   Schottky Diode (Isolated) 30V 6.5A (Ta) 29 mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 30V 6.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   Schottky Diode (Isolated) 30V 6.5A (Ta) 32 mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET P-CH 30V 4.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 P-Channel   Schottky Diode (Isolated) 30V 4.7A (Ta) 62 mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel   - 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 17nC @ 5V - 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 2 N-Channel (Dual) 2W Logic Level Gate 30V 7.8A, 8.9A 21.8 mOhm @ 7.8A, 10V 2.25V @ 25µA 6.9nC @ 4.5V 600pF @ 15V      
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Infineon Technologies MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 2 N-Channel (Dual) 1.4W, 2W Logic Level Gate 30V 6.4A, 9.7A 22.6 mOhm @ 6.4A, 10V 2.25V @ 25µA 6.9nC @ 4.5V 580pF @ 15V      
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Infineon Technologies MOSFET N/P-CH 30V 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N and P-Channel 2.5W Standard 30V 5.8A, 4.3A 45 mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V      
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