- Manufacture :
- Series :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 4.8A 8TSSOP | 8-TSSOP (0.173", 4.40mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-TSSOP | 0 | 4000 | 2 N-Channel (Dual) | 1.2W | Logic Level Gate | 20V | 4.8A | 35 mOhm @ 4.8A, 4.5V | 1.2V @ 250µA | 23nC @ 4.5V | 1340pF @ 15V | |||
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VIEW | onsemi | MOSFET 2P-CH 20V 4.8A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 2500 | 2 P-Channel (Dual) | 750mW | Logic Level Gate | 20V | 4.8A | 33 mOhm @ 6.2A, 4.5V | 1.2V @ 250µA | 35nC @ 4.5V | 1700pF @ 16V | |||
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VIEW | Infineon Technologies | MOSFET 2N-CH 20V 4.8A TSSOP-8 | 8-TSSOP (0.173", 4.40mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-TSSOP | 0 | 4000 | 2 N-Channel (Dual) | 1.2W | Logic Level Gate | 20V | 4.8A | 35 mOhm @ 4.8A, 4.5V | 1.2V @ 250µA | 23nC @ 4.5V | 1340pF @ 15V |
